AIM- To study the VI Characteristics of TRIAC with positive and negative biasing and plot the curve between V and I. APPARATUS- NV6532 Charactersiitc Trainer, Patch Cord, Wires THEORY- A semiconductor device that is used to control the negative and positive half cycles is called “TRIAC”. The word “tri” indicates that the device has three […]
AIM- To study the VI characteristics of DIAC with positive biasing and plot the curve between V and I. APPARATUS- NV6531 Diac Characteristic Trainer, 2mm Patch Cord THEORY- The diac is a two-terminal device that has three semiconductor layers. It is a bidirectional diode, i.e. it can be made to conduct in either direction. This
AIM- To study the VI characteristics of SCR. APPARATUS- NV6530 SCR Characteristics Trainer, Wires THEORY- SCR is a four-layered semiconductor device that is alternative of P-type and N-type semiconductor silicon. Junction J1, J2 and J3 (J1, J2 and J3 operate in forward direction while middle operates in reverse direction) and three terminals known as anode
Aim: To plot the V-I characteristics of the solar cell Apparatus Required: Theory: A solar cell is a semiconductor device which converts solar energy into electrical energy. It is also called Photovoltaic cell. Solar cell works as a PN junction diode. A built in depletion region is generated in that without an applied reverse bias
Metal Oxide Semiconductor Field Effect Transistor Aim: To study the V-I characteristics of MOSFET Apparatus Required: Theory: MOSFT stands for Metal Oxide Semiconductor Field Effect Transistor. It is actually a four terminal device whose substrate terminal must be always hold at one of the extreme voltage in the circuit either the most positive for PMOS
Aim :- 1. To determine the Hall voltage developed across the sample material.2. To calculate the Hall coefficient and the carrier concentration of the sample material. Apparatus:- Two solenoids, Constant current supply, Four probe, Digital gauss meter, Hall effect apparatus (which consist of Constant Current Generator (CCG), digital milli voltmeter and Hall probe). Theory :-If
Aim:- 1. To measure drain current 𝐼𝑑 , at different values of gate voltage . 2. To measure drain current 𝐼𝑑 , for different values of drain – source voltage . To plot input /output characteristics curves and evaluate the parameters. Apparatus:- JFET (BFW10), Bread board, Regulated Power supply (0 – 2 V) and
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SEMICONDUCTOR DEVICES EXPERIMENTS
Zener diode Aim:- To study the I-V Characteristics of Zener Diode. Apparatus :- : Zener Diode, Battery, Connecting Wires, Resistances, Voltmeter, Ammeter, etc. Theory:- Forward biasing:- An external voltage applied with the polarity such that negative terminal of battery is connected to n –side of junction and the positive terminal of battery is connected to
AIM: To study the I-V Characteristics of Ordinary Diode. APPARATUS: P-N Junction Diode, Battery, Connecting Wires, Resistances, Voltmeter, Ammeter. THEORY: A P-N junction is formed by doping the P-type with trivalent impurities which has excess holes and the N-type with pentavalent impurities which has excess electrons. In forward bias, a positive voltage on P allows
